Álvaro Fernández González-rekin lankidetzan egindako argitalpenak (4)

2015

  1. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots

    Semiconductor Science and Technology, Vol. 30, Núm. 11

2012

  1. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

    Applied Physics Letters, Vol. 100, Núm. 1

2011

  1. Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

    Journal of Physics: Conference Series

  2. Inhibition of in desorption in diluted nitride InAsN quantum dots

    Applied Physics Letters, Vol. 98, Núm. 7