Publicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (6)

2015

  1. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots

    Semiconductor Science and Technology, Vol. 30, Núm. 11

2012

  1. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

  2. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

    Nanoscale Research Letters, Vol. 7

  3. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

    Applied Physics Letters, Vol. 100, Núm. 1

2011

  1. Inhibition of in desorption in diluted nitride InAsN quantum dots

    Applied Physics Letters, Vol. 98, Núm. 7

2009

  1. Aberration-corrected scanning transmission electron microscopy: From atomic imaging and analysis to solving energy problems

    Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 367, Núm. 1903, pp. 3709-3733