Publicaciones en colaboración con investigadores/as de University of Nottingham (5)

2011

  1. Distribution of bismuth atoms in epitaxial GaAsBi

    Applied Physics Letters, Vol. 98, Núm. 10

2010

  1. Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

    Applied Surface Science, Vol. 256, Núm. 18, pp. 5688-5690

2009

  1. Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates

    Microelectronics Journal, Vol. 40, Núm. 3, pp. 537-539

2007

  1. A TEM study of the evolution of InAs/GaAs self-assembled dots on (3 1 1)B GaAs with growth interruption

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 168-170

  2. Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

    Applied Physics Letters, Vol. 91, Núm. 25