Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica

2002

1. AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

2. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

3. Computer image HRTEM simulation of catalytic nanoclusters on semiconductor gas sensor materials supports

   Materials Science and Engineering B: Solid-State Materials for Advanced Technology

4. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

   Materials Research Society Symposium - Proceedings

5. Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

   GAN AND RELATED ALLOYS-2001

6. Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers

   Physica Status Solidi (A) Applied Research

7. High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE

   Physica Status Solidi C: Conferences

8. High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE

   INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS

9. Influence of the nature of the noble metal (Rh,Pt) on the low-temperature reducibility of a Ce/Tb mixed oxide with application as TWC component

   Surface and Interface Analysis

10. Influence of the noble metal on the properties as oxygen exchanger of Rh/LnOx systems (Ln: Ce,Tb): Application of the oxygen buffering capacity (OBC) technique

    Journal of Alloys and Compounds

11. Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

    Physica Status Solidi (B) Basic Research

12. Preparation of epitaxial templates for molecular beam epitaxy of III-nitrides on silicon substrates

    Physica Status Solidi C: Conferences

13. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

14. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

15. Thermal behavior of (Ce,Zr)Ox/Al2O3 complex oxides prepared by a microemulsion method

    Physical Chemistry Chemical Physics

16. Time resolved electron energy loss spectroscopy as a tool for controlling and monitoring the early stages of electron beam induced transformations

    Microscopy and Microanalysis