Saila
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Biltzar ekarpenak (16) Ikertzaileren baten partaidetza izan duten argitalpenak
2002
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AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Computer image HRTEM simulation of catalytic nanoclusters on semiconductor gas sensor materials supports
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE
Materials Research Society Symposium - Proceedings
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Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy
GAN AND RELATED ALLOYS-2001
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Filtering study of threading dislocations in AlN buffered MBE GaN/sapphire using single and multiple high temperature AlN intermediate layers
Physica Status Solidi (A) Applied Research
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High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE
Physica Status Solidi C: Conferences
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High reflectivity AlGaN/AlN DBR mirrors grown by PA-MBE
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS
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Influence of the nature of the noble metal (Rh,Pt) on the low-temperature reducibility of a Ce/Tb mixed oxide with application as TWC component
Surface and Interface Analysis
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Influence of the noble metal on the properties as oxygen exchanger of Rh/LnOx systems (Ln: Ce,Tb): Application of the oxygen buffering capacity (OBC) technique
Journal of Alloys and Compounds
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Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy
Physica Status Solidi (B) Basic Research
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Preparation of epitaxial templates for molecular beam epitaxy of III-nitrides on silicon substrates
Physica Status Solidi C: Conferences
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Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
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The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal
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Thermal behavior of (Ce,Zr)Ox/Al2O3 complex oxides prepared by a microemulsion method
Physical Chemistry Chemical Physics
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Time resolved electron energy loss spectroscopy as a tool for controlling and monitoring the early stages of electron beam induced transformations
Microscopy and Microanalysis