Ingeniería Informática
Departamento
Rensselaer Polytechnic Institute
Troy, Estados UnidosPublicaciones en colaboración con investigadores/as de Rensselaer Polytechnic Institute (2)
2009
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
2008
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis