Daniel Carvalho-rekin lankidetzan egindako argitalpenak (7)

2016

  1. Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction

    Scientific Reports, Vol. 6

2015

  1. Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

    Nanotechnology, Vol. 26, Núm. 42

  2. Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

    Microscopy and Microanalysis, Vol. 21, Núm. 4, pp. 994-1005

2013

  1. N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

    Journal of Applied Physics, Vol. 113, Núm. 3

  2. Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

    Nanotechnology, Vol. 24, Núm. 50

2012

  1. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

    Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354

  2. High-resolution electron diffraction: Accounting for radially and angularly invariant distortions

    Microscopy and Microanalysis, Vol. 18, Núm. 3, pp. 638-644