Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Instituto de investigación
Rensselaer Polytechnic Institute
Troy, Estados UnidosPublicaciones en colaboración con investigadores/as de Rensselaer Polytechnic Institute (8)
2015
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Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
Nanotechnology, Vol. 26, Núm. 42
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Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs
Microscopy and Microanalysis, Vol. 21, Núm. 4, pp. 994-1005
2009
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
2008
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis
2006
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Carbon nanotubes structure modification and synthesis of nanocrystalline diamond-nanotubes composites
Microscopy and Microanalysis
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Ion irradiation induced structural modifications in diamond nanoparticles
Nanotechnology, Vol. 17, Núm. 1, pp. 305-309
2004
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Carbon nanotubes with graphitic wings
Advanced Materials, Vol. 16, Núm. 7, pp. 610-613