Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs

  1. Mánuel, J.M.
  2. Morales, F.M.
  3. García, R.
  4. Lim, T.
  5. Kirste, L.
  6. Aidam, R.
  7. Ambacher, O.
Journal:
Crystal Growth and Design

ISSN: 1528-7483,  1528-7505

Year of publication: 2011

Volume: 11

Issue: 6

Pages: 2588-2591

Type: Article

DOI: 10.1021/CG200341Z GOOGLE SCHOLAR
Data source: Scopus