Improved structural and chemical properties of nearly lattice-matched ternary and quaternary barriers for GaN-based HEMTs

  1. Mánuel, J.M.
  2. Morales, F.M.
  3. García, R.
  4. Lim, T.
  5. Kirste, L.
  6. Aidam, R.
  7. Ambacher, O.
Aldizkaria:
Crystal Growth and Design

ISSN: 1528-7483,  1528-7505

Argitalpen urtea: 2011

Alea: 11

Zenbakia: 6

Orrialdeak: 2588-2591

Mota: Artikulua

DOI: 10.1021/CG200341Z GOOGLE SCHOLAR
Datuen iturria: Scopus