Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
- Morales, F.M.
- García, R.
- Molina, S.I.
- Aouni, A.
- Postigo, P.A.
- Fonstad, C.G.
Revista:
Applied Physics Letters
ISSN: 0003-6951
Any de publicació: 2009
Volum: 94
Número: 4
Tipus: Article