Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
- Morales, F.M.
- García, R.
- Molina, S.I.
- Aouni, A.
- Postigo, P.A.
- Fonstad, C.G.
Zeitschrift:
Applied Physics Letters
ISSN: 0003-6951
Datum der Publikation: 2009
Ausgabe: 94
Nummer: 4
Art: Artikel