Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

  1. Morales, F.M.
  2. García, R.
  3. Molina, S.I.
  4. Aouni, A.
  5. Postigo, P.A.
  6. Fonstad, C.G.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2009

Volume: 94

Issue: 4

Type: Article

DOI: 10.1063/1.3077610 GOOGLE SCHOLAR