Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

  1. Álvarez, A.L.
  2. Calle, F.
  3. Valtueña, J.F.
  4. Faura, J.
  5. Sánchez, M.A.
  6. Calleja, E.
  7. Muñoz, E.
  8. Morante, J.R.
  9. González, D.
  10. Araujo, D.
  11. García Roja, R.
Revue:
Applied Surface Science

ISSN: 0169-4332

Année de publication: 1998

Volumen: 123-124

Pages: 303-307

Type: Article

DOI: 10.1016/S0169-4332(97)00483-2 GOOGLE SCHOLAR
La source de données: Scopus