Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

  1. Araújo, D.
  2. González, D.
  3. García, R.
  4. Sacedón, A.
  5. Calleja, E.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 1995

Volumen: 67

Pages: 3632

Type: Article

DOI: 10.1063/1.115341 GOOGLE SCHOLAR
La source de données: Scopus