High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

  1. Pham, T.T.
  2. Gutiérrez, M.
  3. Masante, C.
  4. Rouger, N.
  5. Eon, D.
  6. Gheeraert, E.
  7. Araùjo, D.
  8. Pernot, J.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2018

Volume: 112

Issue: 10

Type: Article

DOI: 10.1063/1.5018403 GOOGLE SCHOLAR
Data source: Scopus