High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
- Pham, T.T.
- Gutiérrez, M.
- Masante, C.
- Rouger, N.
- Eon, D.
- Gheeraert, E.
- Araùjo, D.
- Pernot, J.
Aldizkaria:
Applied Physics Letters
ISSN: 0003-6951
Argitalpen urtea: 2018
Alea: 112
Zenbakia: 10
Mota: Artikulua