Critical boron-doping levels for generation of dislocations in synthetic diamond

  1. Alegre, M.P.
  2. Araújo, D.
  3. Fiori, A.
  4. Pinero, J.C.
  5. Lloret, F.
  6. Villar, M.P.
  7. Achatz, P.
  8. Chicot, G.
  9. Bustarret, E.
  10. Jomard, F.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2014

Volumen: 105

Número: 17

Type: Article

DOI: 10.1063/1.4900741 GOOGLE SCHOLAR