Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

  1. González, D.
  2. Braza, V.
  3. Utrilla, A.D.
  4. Gonzalo, A.
  5. Reyes, D.F.
  6. Ben, T.
  7. Guzman, A.
  8. Hierro, A.
  9. Ulloa, J.M.
Revista:
Nanotechnology

ISSN: 1361-6528 0957-4484

Any de publicació: 2017

Volum: 28

Número: 42

Tipus: Article

DOI: 10.1088/1361-6528/AA83E2 GOOGLE SCHOLAR