(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

  1. Reyes, D.F.
  2. Utrilla, A.D.
  3. Ben, T.
  4. Saborido, J.J.
  5. Ulloa, J.M.
  6. Bárcena-Gonzálz, G.
  7. GuerreroLebrero, M.P.
  8. Guerrero, E.
  9. Gonzalez, D.
Zeitschrift:
Microscopy and Microanalysis

ISSN: 1435-8115,  1431-9276

Datum der Publikation: 2016

Ausgabe: 22

Seiten: 46-47

Art: Note

DOI: 10.1017/S1431927616000428 GOOGLE SCHOLAR lock_openOpen Access editor
Datenquelle: Scopus