(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

1. Reyes, D.F.
2. Utrilla, A.D.
3. Ben, T.
4. Saborido, J.J.
5. Ulloa, J.M.
6. Bárcena-Gonzálz, G.
7. GuerreroLebrero, M.P.
8. Guerrero, E.
9. Gonzalez, D.

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DOI: 10.1017/S1431927616000428 GOOGLE SCHOLAR lock_openOpen access editor

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