Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
- Ulloa, J.M.
- Reyes, D.F.
- Montes, M.
- Yamamoto, K.
- Sales, D.L.
- González, D.
- Guzman, A.
- Hierro, A.
Aldizkaria:
Applied Physics Letters
ISSN: 0003-6951
Argitalpen urtea: 2012
Alea: 100
Zenbakia: 1
Mota: Artikulua