Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network

  1. Lebedev, V.
  2. Cimalla, V.
  3. Pezoldt, J.
  4. Himmerlich, M.
  5. Krischok, S.
  6. Schaefer, J.A.
  7. Ambacher, O.
  8. Morales, F.M.
  9. Lozano, J.G.
  10. González, D.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Any de publicació: 2006

Volum: 100

Número: 9

Tipus: Article

DOI: 10.1063/1.2363233 GOOGLE SCHOLAR