Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network

  1. Lebedev, V.
  2. Cimalla, V.
  3. Pezoldt, J.
  4. Himmerlich, M.
  5. Krischok, S.
  6. Schaefer, J.A.
  7. Ambacher, O.
  8. Morales, F.M.
  9. Lozano, J.G.
  10. González, D.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Ano de publicación: 2006

Volume: 100

Número: 9

Tipo: Artigo

DOI: 10.1063/1.2363233 GOOGLE SCHOLAR