Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE

1. Haider, N.
2. Suseendran, J.
3. Chakrabarti, S.
4. Herrera, M.
5. Bonds, M.
6. Browning, N.D.