Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE

  1. Haider, N.
  2. Suseendran, J.
  3. Chakrabarti, S.
  4. Herrera, M.
  5. Bonds, M.
  6. Browning, N.D.
Aldizkaria:
Journal of Nanoscience and Nanotechnology

ISSN: 1533-4880

Argitalpen urtea: 2010

Alea: 10

Zenbakia: 8

Orrialdeak: 5202-5206

Mota: Biltzar ekarpena

DOI: 10.1166/JNN.2010.2380 GOOGLE SCHOLAR
Datuen iturria: Scopus