Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE

  1. Haider, N.
  2. Suseendran, J.
  3. Chakrabarti, S.
  4. Herrera, M.
  5. Bonds, M.
  6. Browning, N.D.
Revue:
Journal of Nanoscience and Nanotechnology

ISSN: 1533-4880

Année de publication: 2010

Volumen: 10

Número: 8

Pages: 5202-5206

Type: Communication dans un congrès

DOI: 10.1166/JNN.2010.2380 GOOGLE SCHOLAR
La source de données: Scopus