Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy

  1. Lebedev, V.
  2. Morales, F.M.
  3. Romanus, H.
  4. Ecke, G.
  5. Cimalla, V.
  6. Himmerlich, M.
  7. Krischok, S.
  8. Schaefer, J.A.
  9. Ambacher, O.
Revue:
Physica Status Solidi (C) Current Topics in Solid State Physics

ISSN: 1862-6351

Année de publication: 2006

Volumen: 3

Pages: 1420-1424

Type: Communication dans un congrès

DOI: 10.1002/PSSC.200565178 GOOGLE SCHOLAR
La source de données: Scopus