Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
- Lebedev, V.
- Morales, F.M.
- Romanus, H.
- Ecke, G.
- Cimalla, V.
- Himmerlich, M.
- Krischok, S.
- Schaefer, J.A.
- Ambacher, O.
Revista:
Physica Status Solidi (C) Current Topics in Solid State Physics
ISSN: 1862-6351
Ano de publicación: 2006
Volume: 3
Páxinas: 1420-1424
Tipo: Achega congreso