Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy

  1. Laleyan, D.A.
  2. Fernández-Delgado, N.
  3. Reid, E.T.
  4. Wang, P.
  5. Pandey, A.
  6. Botton, G.A.
  7. Mi, Z.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 2020

Volume: 116

Issue: 15

Type: Article

DOI: 10.1063/1.5144838 GOOGLE SCHOLAR