High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

  1. Cañas, J.
  2. Dussarrat, C.
  3. Teramoto, T.
  4. Masante, C.
  5. Gutierrez, M.
  6. Gheeraert, E.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 2022

Volumen: 121

Número: 7

Type: Article

DOI: 10.1063/5.0103037 GOOGLE SCHOLAR lock_openAccès ouvert editor
La source de données: Scopus