Ciencia e Ingeniería de los Materiales
TEP120
Claude Bernard University Lyon 1
Villeurbanne, FranciaClaude Bernard University Lyon 1-ko ikertzaileekin lankidetzan egindako argitalpenak (5)
2023
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AlGaN/AlN Stranski-Krastanov Quantum Dots for Highly Efficient Electron Beam-Pumped Emitters: The Role of Miniaturization and Composition to Attain Far UV-C Emission
ACS Photonics, Vol. 10, Núm. 12, pp. 4225-4235
2005
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Analysis of SiC islands formation during first steps of Si carbonization process
Materials Science Forum
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Defect morphology and strain of CVD grown 3C-SiC layers: Effect of the carbonization process
Physica Status Solidi (A) Applications and Materials Science
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Planar defects, voids and their relationship in 3C-SiC layers
Materials Science Forum
2004
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Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy
Materials Science Forum