Ciencia e Ingeniería de los Materiales
TEP120
Oak Ridge National Laboratory
Oak Ridge, Estados UnidosPublicacións en colaboración con investigadores/as de Oak Ridge National Laboratory (12)
2021
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Modeling of flash sintering of ionic ceramics
MRS Bulletin, Vol. 46, Núm. 1, pp. 67-75
2013
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Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering
Applied Physics Express, Vol. 6, Núm. 4
2011
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Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots
Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778
2009
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
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High resolution electron microscopy of GaAs capped GaSb nanostructures
Applied Physics Letters, Vol. 94, Núm. 4
2008
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A method to determine the strain and nucleation sites of stacked nano-objects
Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426
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Experimental and simulated strain field maps in stacked quantum wires
Microscopy and Microanalysis
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis
2007
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Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images
Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007
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Direct imaging of quantum wires nucleated at diatomic steps
Applied Physics Letters, Vol. 91, Núm. 14
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Incorporation of Sb in InAsGaAs quantum dots
Applied Physics Letters, Vol. 91, Núm. 26
2006
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Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites
Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658