Ciencia e Ingeniería de los Materiales
TEP120
Instituto de Microelectrónica de Madrid
Madrid, EspañaPublikationen in Zusammenarbeit mit Forschern von Instituto de Microelectrónica de Madrid (36)
2018
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GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
2017
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Strain-balanced type-II superlattices for efficient multi-junction solar cells
Scientific Reports, Vol. 7, Núm. 1
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The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells
Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122
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Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289
2014
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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
Materials Express, Vol. 4, Núm. 1, pp. 41-53
2013
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Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy
Journal of Physics: Conference Series
2012
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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Applied Physics Letters, Vol. 101, Núm. 25
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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
Conference Record of the IEEE Photovoltaic Specialists Conference
2011
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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
Materials Letters, Vol. 65, Núm. 11, pp. 1608-1610
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Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots
Advanced Science Letters, Vol. 4, Núm. 11-12, pp. 3776-3778
2010
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Blocking of indium incorporation by antimony in III-V-Sb nanostructures
Nanotechnology, Vol. 21, Núm. 14
2009
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Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy
Crystal Growth and Design, Vol. 9, Núm. 2, pp. 1216-1218
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High resolution electron microscopy of GaAs capped GaSb nanostructures
Applied Physics Letters, Vol. 94, Núm. 4
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Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
Applied Physics Letters, Vol. 94, Núm. 4
2008
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A method to determine the strain and nucleation sites of stacked nano-objects
Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426
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Experimental and simulated strain field maps in stacked quantum wires
Microscopy and Microanalysis
2007
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Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images
Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007
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Direct imaging of quantum wires nucleated at diatomic steps
Applied Physics Letters, Vol. 91, Núm. 14
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Excitons in coupled InAsInP self-assembled quantum wires
Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 12
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Incorporation of Sb in InAsGaAs quantum dots
Applied Physics Letters, Vol. 91, Núm. 26