Materiales y Nanotecnología para la Innovación
TEP946
Lawrence Livermore National Laboratory
Livermore, Estados UnidosPublicaciones en colaboración con investigadores/as de Lawrence Livermore National Laboratory (12)
2010
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Active and stable embedded Au@CeO2 catalysts for preferential oxidation of CO
Chemistry of Materials, Vol. 22, Núm. 14, pp. 4335-4345
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Natural oxidation of InN quantum dots: The role of cubic InN
Physica Status Solidi (C) Current Topics in Solid State Physics
2009
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Application of image processing to STEM tomography of low-contrast materials
Ultramicroscopy, Vol. 110, Núm. 1, pp. 67-81
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Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12
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Structural changes during the natural aging process of InN quantum dots
Journal of Applied Physics, Vol. 105, Núm. 1
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Three dimensional analyses of flux pinning centers in Dy-doped YBa2Cu3O7-x coated superconductors by STEM tomography
Physica C: Superconductivity and its Applications, Vol. 469, Núm. 23-24, pp. 2052-2059
2008
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Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall
Applied Physics Letters, Vol. 93, Núm. 9
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Dual-axis STEM tomography of Dy-doped YBa2Cu3O7-x coated superconductors
Microscopy and Microanalysis
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High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells
Microscopy and Microanalysis
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Observation of the three-dimensional distribution of flux pinning centers in Dy-doped YBa2 Cu3 O7-x coated conductors
Journal of Applied Physics, Vol. 103, Núm. 8
2006
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Applications of atomic scale scanning transmission electron microscopy
Microscopy and Microanalysis
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Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells
Microscopy and Microanalysis