Publicaciones en colaboración con investigadores/as de Oak Ridge National Laboratory (17)

2013

  1. Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering

    Applied Physics Express, Vol. 6, Núm. 4

2011

  1. Calculation of integrated intensities in aberration-corrected Z-contrast images

    Journal of Electron Microscopy, Vol. 60, Núm. 1, pp. 29-33

  2. Compositional analysis with atomic column spatial resolution by 5th-order aberration-corrected scanning transmission electron microscopy

    Microscopy and Microanalysis, Vol. 17, Núm. 4, pp. 578-581

  3. Distribution of bismuth atoms in epitaxial GaAsBi

    Applied Physics Letters, Vol. 98, Núm. 10

2010

  1. Exploring semiconductor quantum dots and wires by high resolution electron microscopy

    Journal of Physics: Conference Series

  2. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

    Nanotechnology, Vol. 21, Núm. 32

2009

  1. Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

    Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12

  2. Column-by-column compositional mapping by Z-contrast imaging

    Ultramicroscopy, Vol. 109, Núm. 2, pp. 172-176

  3. Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)

    Ultramicroscopy

  4. High resolution electron microscopy of GaAs capped GaSb nanostructures

    Applied Physics Letters, Vol. 94, Núm. 4

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

  3. High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

    Microscopy and Microanalysis

2007

  1. Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images

    Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

  2. Direct imaging of quantum wires nucleated at diatomic steps

    Applied Physics Letters, Vol. 91, Núm. 14

  3. Incorporation of Sb in InAsGaAs quantum dots

    Applied Physics Letters, Vol. 91, Núm. 26

2006

  1. Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

    Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658