Publicacións nas que colabora con Enrique Calleja Pardo (9)

2003

  1. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

1999

  1. Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 413-417

1998

  1. Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278

  2. Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

    Applied Surface Science, Vol. 123-124, pp. 303-307

1995

  1. Design of InGaAs linear graded buffer structures

    Applied Physics Letters, pp. 3334

  2. Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

    Applied Physics Letters, Vol. 67, pp. 3632

1994

  1. Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501

  2. Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers

    Applied Physics Letters, Vol. 65, Núm. 19, pp. 2460-2462

  3. Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519