DANIEL
ARAUJO GAY
Catedrático de Universidad
Claude Bernard University Lyon 1
Villeurbanne, FranciaPublicaciones en colaboración con investigadores/as de Claude Bernard University Lyon 1 (4)
2005
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Analysis of SiC islands formation during first steps of Si carbonization process
Materials Science Forum
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Defect morphology and strain of CVD grown 3C-SiC layers: Effect of the carbonization process
Physica Status Solidi (A) Applications and Materials Science
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Planar defects, voids and their relationship in 3C-SiC layers
Materials Science Forum
2004
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Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy
Materials Science Forum