Publicaciones en las que colabora con Álvaro Fernández González (13)

2020

  1. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

    Solar Energy Materials and Solar Cells, Vol. 210

2019

  1. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states

    Solar Energy Materials and Solar Cells, Vol. 200

2018

  1. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate

    Applied Surface Science, Vol. 444, pp. 260-266

2017

  1. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

    Nanotechnology, Vol. 28, Núm. 42

  2. Strain-balanced type-II superlattices for efficient multi-junction solar cells

    Scientific Reports, Vol. 7, Núm. 1

  3. The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells

    Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122

  4. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289

2016

  1. General route for the decomposition of InAs quantum dots during the capping process

    Nanotechnology, Vol. 27, Núm. 12

  2. Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

    Solar Energy Materials and Solar Cells, Vol. 144, pp. 128-135

  3. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots

    Solar Energy Materials and Solar Cells, Vol. 145, pp. 154-161

2015

  1. Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

    Proceedings of SPIE - The International Society for Optical Engineering

2014

  1. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    Journal of Applied Physics, Vol. 116, Núm. 13

  2. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    Applied Physics Letters, Vol. 105, Núm. 4