Publicacions (94) Publicacions de TERESA BEN FERNANDEZ

2024

  1. Aplicación de metodologías de aprendizaje en casos prácticos para la enseñanza de asignaturas científicico-tecnológicas

    Brazilian Journal of Development, Vol. 10, pp. 1-16

  2. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

    Nanomaterials, Vol. 14, Núm. 4

  3. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages

    Applied Surface Science, Vol. 644

  4. Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing

    ACS Applied Nano Materials, Vol. 7, Núm. 15, pp. 17553-17560

  5. Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing

    Small, Vol. 20, Núm. 7

2023

  1. Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

    Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797

  2. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions

    Applied Surface Science, Vol. 607

  3. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

    Nanomaterials, Vol. 13, Núm. 5

  4. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Advances in Nanomaterials for Photovoltaic Applications (MDPI), pp. 95-110

  5. Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

2022

  1. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

    Applied Surface Science, Vol. 573

  2. Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

    Applied Surface Science, Vol. 604

  3. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Nanomaterials, Vol. 12, Núm. 8

  4. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

    Nanomaterials, Vol. 12, Núm. 14

2021

  1. Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

    Applied Surface Science, Vol. 537

2020

  1. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

    Solar Energy Materials and Solar Cells, Vol. 210

  2. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures

    Applied Surface Science, Vol. 508

  3. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures

    Journal of Alloys and Compounds, Vol. 832

2019

  1. Control of nitrogen inhomogeneities in Type-I and Type-II GaAsSbN superlattices for solar cell devices

    Nanomaterials, Vol. 9, Núm. 4

  2. Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

    Applied Surface Science, Vol. 485, pp. 29-34