Publicacions (92) Publicacions de TERESA BEN FERNANDEZ

2024

  1. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

    Nanomaterials, Vol. 14, Núm. 4

  2. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages

    Applied Surface Science, Vol. 644

  3. Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing

    Small, Vol. 20, Núm. 7

2023

  1. Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

    Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797

  2. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions

    Applied Surface Science, Vol. 607

  3. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

    Nanomaterials, Vol. 13, Núm. 5

  4. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Advances in Nanomaterials for Photovoltaic Applications (MDPI), pp. 95-110

  5. Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

2022

  1. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

    Applied Surface Science, Vol. 573

  2. Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

    Applied Surface Science, Vol. 604

  3. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Nanomaterials, Vol. 12, Núm. 8

  4. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

    Nanomaterials, Vol. 12, Núm. 14

2021

  1. Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

    Applied Surface Science, Vol. 537

2020

  1. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

    Solar Energy Materials and Solar Cells, Vol. 210

  2. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures

    Applied Surface Science, Vol. 508

  3. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures

    Journal of Alloys and Compounds, Vol. 832

2019

  1. Control of nitrogen inhomogeneities in Type-I and Type-II GaAsSbN superlattices for solar cell devices

    Nanomaterials, Vol. 9, Núm. 4

  2. Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

    Applied Surface Science, Vol. 485, pp. 29-34

  3. Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices

    Applied Surface Science, Vol. 475, pp. 473-478

  4. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states

    Solar Energy Materials and Solar Cells, Vol. 200