Publicacions en què col·labora amb DANIEL FERNANDEZ DE LOS REYES (27)

2024

  1. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

    Nanomaterials, Vol. 14, Núm. 4

  2. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages

    Applied Surface Science, Vol. 644

2023

  1. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions

    Applied Surface Science, Vol. 607

  2. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

    Nanomaterials, Vol. 13, Núm. 5

  3. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Advances in Nanomaterials for Photovoltaic Applications (MDPI), pp. 95-110

  4. Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

2022

  1. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

    Applied Surface Science, Vol. 573

  2. Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

    Applied Surface Science, Vol. 604

  3. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Nanomaterials, Vol. 12, Núm. 8

  4. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

    Nanomaterials, Vol. 12, Núm. 14

2020

  1. Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

    Solar Energy Materials and Solar Cells, Vol. 210

  2. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures

    Applied Surface Science, Vol. 508

  3. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures

    Journal of Alloys and Compounds, Vol. 832

2019

  1. Control of nitrogen inhomogeneities in Type-I and Type-II GaAsSbN superlattices for solar cell devices

    Nanomaterials, Vol. 9, Núm. 4

  2. Effect of capping rate on InAs/GaAs quantum dot solar cells

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

    Applied Surface Science, Vol. 485, pp. 29-34

  4. Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices

    Applied Surface Science, Vol. 475, pp. 473-478

  5. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states

    Solar Energy Materials and Solar Cells, Vol. 200

2018

  1. Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing

    Applied Surface Science, Vol. 459, pp. 1-8

  2. Correcting sample drift using Fourier harmonics

    Micron, Vol. 110, pp. 18-27