Publikationen, an denen er mitarbeitet DAVID GONZALEZ ROBLEDO (67)


  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62


  1. Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

    Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12

  2. Determination of the composition of InxGa1-xN from strain measurements

    Acta Materialia, Vol. 57, Núm. 19, pp. 5681-5692

  3. Structural changes during the natural aging process of InN quantum dots

    Journal of Applied Physics, Vol. 105, Núm. 1


  1. High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

    Microscopy and Microanalysis

  2. Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

    Springer Series in Materials Science (Springer Verlag), pp. 199-221

  3. Strain relief and nucleation mechanisms of InN quantum dots

    Quantum Dots: Research, Technology and Applications (Nova Science Publishers, Inc.), pp. 267-298

  4. Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics


  1. Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

    Applied Physics Letters, Vol. 91, Núm. 7

  2. Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

    Applied Physics Letters, Vol. 90, Núm. 9

  3. Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

    Physica Status Solidi (C) Current Topics in Solid State Physics

  4. Kinetic considerations on the phase separation of GaInNAs quantum wells

    Physica Status Solidi (C) Current Topics in Solid State Physics

  5. Strain mapping at the atomic scale in highly mismatched heterointerfaces

    Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593

  6. Strain relief analysis of InN quantum dots grown on GaN

    Nanoscale Research Letters, Vol. 2, Núm. 9, pp. 442-446