MIRIAM HERRERA COLLADO-rekin lankidetzan egindako argitalpenak (36)

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

  2. Si and Ge nanostructures epitaxy on a crystalline insulating LaAlO 3(001) substrate

    Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 4, pp. 657-662

  3. Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO 3(0 0 1)

    Acta Materialia, Vol. 60, Núm. 5, pp. 1929-1936

2010

  1. Natural oxidation of InN quantum dots: The role of cubic InN

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

    Nanotechnology, Vol. 21, Núm. 18

2009

  1. Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

    Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12

  2. Structural changes during the natural aging process of InN quantum dots

    Journal of Applied Physics, Vol. 105, Núm. 1

2008

  1. High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

    Microscopy and Microanalysis

  2. Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

    Springer Series in Materials Science (Springer Verlag), pp. 199-221

2007

  1. Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots

    Applied Physics Letters, Vol. 91, Núm. 7

  2. Kinetic considerations on the phase separation of GaInNAs quantum wells

    Physica Status Solidi (C) Current Topics in Solid State Physics

  3. Strain mapping at the atomic scale in highly mismatched heterointerfaces

    Advanced Functional Materials, Vol. 17, Núm. 14, pp. 2588-2593

2006

  1. Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells

    Microscopy and Microanalysis

  2. Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices

    Applied Physics Letters, Vol. 88, Núm. 19

2005

  1. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1096-1102

  2. Characterization of structure and defects in dot-in-well laser structures

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 793-797

  3. Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory

    Journal of Applied Physics, Vol. 97, Núm. 7

  4. Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 798-803

  5. Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

    Journal of Crystal Growth

  6. Influence of structure and defects on the performance of dot-in-well laser structures

    Proceedings of SPIE - The International Society for Optical Engineering