Publicaciones en las que colabora con DANIEL ARAUJO GAY (13)

2006

  1. Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

    Physica Status Solidi (C) Current Topics in Solid State Physics

2005

  1. Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy

    Applied Physics Letters, Vol. 87, Núm. 26, pp. 1-3

2000

  1. Control of phase modulation in InGaAs epilayers

    Applied Physics Letters, Vol. 76, Núm. 22, pp. 3236-3238

1999

  1. Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 302-304

  2. Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers

    Applied Physics Letters, Vol. 74, Núm. 18, pp. 2649-2651

1998

  1. Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems

    Applied Physics Letters, Vol. 72, Núm. 15, pp. 1875-1877

  2. Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

    Applied Surface Science, Vol. 123-124, pp. 303-307

1997

  1. A work-hardening based model of the strain relief in multilayer graded-buffer structures

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3099-3101

  2. Advantages of thin interfaces in step-graded buffer structures

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45

  3. Work-hardening effects in the lattice relaxation of single lay er heterostructures

    Applied Physics Letters, Vol. 71, Núm. 17, pp. 2475-2477

1995

  1. Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication

    Applied Physics Letters, Vol. 67, pp. 3632

1994

  1. Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501

  2. Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519