Publicaciones en las que colabora con DAVID SALES LERIDA (12)

2015

  1. Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

    Semiconductor Science and Technology, Vol. 30, Núm. 9

  2. Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots

    Semiconductor Science and Technology, Vol. 30, Núm. 11

2014

  1. Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

    Nanoscale Research Letters, Vol. 9, Núm. 1, pp. 1-8

  2. Transmission electron microscopy of 1D-nanostructures

    Transmission Electron Microscopy Characterization of Nanomaterials (Springer Berlin Heidelberg), pp. 657-701

2013

  1. Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy

    Applied Physics Express, Vol. 6, Núm. 11

  2. Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering

    Applied Physics Express, Vol. 6, Núm. 4

2012

  1. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

    Applied Physics Letters, Vol. 101, Núm. 25

  2. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

  3. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

    Nanoscale Research Letters, Vol. 7

  4. Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer

    Applied Physics Letters, Vol. 100, Núm. 1

2011

  1. Evaluation of the in desorption during the capping process of diluted nitride In(Ga)As quantum dots

    Journal of Physics: Conference Series

  2. Inhibition of in desorption in diluted nitride InAsN quantum dots

    Applied Physics Letters, Vol. 98, Núm. 7