Publicaciones en colaboración con investigadores/as de University of Sheffield (42)

2024

  1. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

    Nanomaterials, Vol. 14, Núm. 4

2023

  1. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions

    Applied Surface Science, Vol. 607

2019

  1. Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

    Applied Surface Science, Vol. 485, pp. 29-34

2015

  1. Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

    Semiconductor Science and Technology, Vol. 30, Núm. 9

2014

  1. Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

    Nanoscale Research Letters, Vol. 9, Núm. 1, pp. 1-8

2013

  1. Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy

    Applied Physics Express, Vol. 6, Núm. 11

  2. Photoluminescence enhancement of InAs(Bi) quantum dots by bi clustering

    Applied Physics Express, Vol. 6, Núm. 4

2009

  1. Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

    Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 12

2008

  1. High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells

    Microscopy and Microanalysis

  2. Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

    Springer Series in Materials Science (Springer Verlag), pp. 199-221

2007

  1. Kinetic considerations on the phase separation of GaInNAs quantum wells

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Effect of the growth temperature in the composition fluctuation of GaInNAs/GaAs quantum wells

    Microscopy and Microanalysis

  2. Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices

    Applied Physics Letters, Vol. 88, Núm. 19

2005

  1. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1096-1102

  2. Characterization of structure and defects in dot-in-well laser structures

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 793-797

  3. Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory

    Journal of Applied Physics, Vol. 97, Núm. 7

  4. Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 798-803

  5. Effect of annealing on anticorrelated InGaAs/GaAs quantum dots

    Microscopy of Semiconducting Materials

  6. Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

    Journal of Crystal Growth

  7. Influence of structure and defects on the performance of dot-in-well laser structures

    Proceedings of SPIE - The International Society for Optical Engineering