MARINA GUTIERREZ PEINADO-rekin lankidetzan egindako argitalpenak (18)

2005

  1. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1096-1102

  2. Characterization of structure and defects in dot-in-well laser structures

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 793-797

  3. Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

    Materials Science and Engineering C, Vol. 25, Núm. 5-8, pp. 798-803

  4. Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

    Journal of Crystal Growth

  5. Influence of structure and defects on the performance of dot-in-well laser structures

    Proceedings of SPIE - The International Society for Optical Engineering

  6. Spinodal decomposition in GaInNAs/GaAs multi-quantum wells

    Physica Status Solidi C: Conferences

  7. Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

    Physica E: Low-Dimensional Systems and Nanostructures

  8. Structural and optical properties of high in and N content GaInNAs quantum wells

    Thin Solid Films, Vol. 483, Núm. 1-2, pp. 185-190

  9. Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

    Journal of Applied Physics, Vol. 98, Núm. 2

2004

  1. Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy

    Design and Nature

  2. Composition fluctuations in GaInNAs multi-quantum wells

    IEE Proceedings: Optoelectronics, Vol. 151, Núm. 5, pp. 271-274

  3. Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells

    ELECTRON MICROSCOPY AND ANALYSIS 2003

  4. Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells

    Institute of Physics Conference Series

  5. Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction

    IEE Proceedings: Optoelectronics, Vol. 151, Núm. 5, pp. 301-304

  6. Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells

    Semiconductor Science and Technology, Vol. 19, Núm. 7, pp. 813-818

  7. Structural defects characterisation of GaInNAs MQWs by TEM and PL

    IEE Proceedings: Optoelectronics, Vol. 151, Núm. 5, pp. 385-388

2002

  1. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  2. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal