Publications (31)

2023

  1. Recycled hybrid material for use as shielding in operations with ionizing radiation

    Cleaner Materials, Vol. 7

  2. High phosphorous incorporation in (100)-oriented MP CVD diamond growth

    Diamond and Related Materials, Vol. 133

  3. Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

    Applied Surface Science, Vol. 615

2022

  1. Trends on Educational Gamification: Challenges and Learning Opportunities lit. ed.

    MDPI

  2. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

2021

  1. Diamond for electronics: Materials, processing and devices

    Materials, Vol. 14, Núm. 22

  2. Study of Early Stages in the Growth of Boron-Doped Diamond on Carbon Fibers

    Physica Status Solidi (A) Applications and Materials Science, Vol. 218, Núm. 5

  3. Selectively boron doped homoepitaxial diamond growth for power device applications

    Applied Physics Letters, Vol. 118, Núm. 2

  4. Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

    Carbon, Vol. 172, pp. 463-473

  5. Dislocation generation mechanisms in heavily boron-doped diamond epilayers

    Applied Physics Letters, Vol. 118, Núm. 5

  6. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

2020

  1. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

  2. Improved field electron emission properties of phosphorus and nitrogen co-doped nanocrystalline diamond films

    Nanomaterials, Vol. 10, Núm. 6

2018

  1. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Journal of Electronic Materials

  2. Aprendizaje mixto en docencia universitaria: recopilación de datos de eficacia comparativa

    III Jornadas de Innovación Docente Universitaria UCA

  3. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

  4. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  5. Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 10

  6. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  7. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7