Publicaciones en las que colabora con David Fuster Signes (18)

2011

  1. Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

    AIP Conference Proceedings

2010

  1. Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

    Nanoscale Research Letters, Vol. 5, Núm. 12, pp. 1913-1916

  2. Morphological evolution of InAs/InP quantum wires through aberration-corrected scanning transmission electron microscopy

    Nanotechnology, Vol. 21, Núm. 32

2009

  1. Column-by-column compositional mapping by Z-contrast imaging

    Ultramicroscopy, Vol. 109, Núm. 2, pp. 172-176

  2. Erratum to: "Column-by-column compositional mapping by Z-contrast imaging" [Ultramicroscopy 109(2) (2009) 172-176] (DOI:10.1016/j.ultramic.2008.10.008)

    Ultramicroscopy

  3. Formation of spatially addressed Ga(As)Sb quantum rings on GaAs(001) substrates by droplet epitaxy

    Crystal Growth and Design, Vol. 9, Núm. 2, pp. 1216-1218

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

2007

  1. Direct imaging of quantum wires nucleated at diatomic steps

    Applied Physics Letters, Vol. 91, Núm. 14

  2. Excitons in coupled InAsInP self-assembled quantum wires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 12

2006

  1. Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

    Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658

2005

  1. Quantitative measurements of the inhomogeneous strain field of stacked self-assembled InAs/InP(001) quantum wires by the Peak Finding Method

    MICROSCOPY OF SEMICONDUCTING MATERIALS

2004

  1. Emission wavelength engineering of InAs/InP(001) quantum wires

    European Physical Journal B, Vol. 40, Núm. 4, pp. 433-437

  2. Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements

    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY

  3. Size control of InAs/InP(001) quantum wires by tailoring P/As exchange

    Applied Physics Letters, Vol. 85, Núm. 8, pp. 1424-1426

  4. Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

    Applied Physics Letters, Vol. 84, Núm. 23, pp. 4723-4725

2003

  1. Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

    Materials Research Society Symposium - Proceedings

  2. Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

    Physica E: Low-Dimensional Systems and Nanostructures