Publicaciones en las que colabora con DAVID GONZALEZ ROBLEDO (15)

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2010

  1. Phase mapping of aging process in InN nanostructures: Oxygen incorporation and the role of the zinc blende phase

    Nanotechnology, Vol. 21, Núm. 18

  2. Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

    Acta Materialia, Vol. 58, Núm. 12, pp. 4120-4125

2009

  1. Determination of the composition of InxGa1-xN from strain measurements

    Acta Materialia, Vol. 57, Núm. 19, pp. 5681-5692

2008

  1. Electron transport properties of indium oxide - Indium nitride metal-oxide-semiconductor heterostructures

    Physica Status Solidi (C) Current Topics in Solid State Physics

  2. Electronic and photoconductive properties of ultrathin InGaN photodetectors

    Journal of Applied Physics, Vol. 103, Núm. 7

  3. InN/In2O3 heterostructures

    Physica Status Solidi (C) Current Topics in Solid State Physics

  4. Structure of cubic polytype indium nitride layers on top of modified sapphire substrates

    Physica Status Solidi (C) Current Topics in Solid State Physics

2007

  1. Coalescence aspects of III-nitride epitaxy

    Journal of Applied Physics, Vol. 101, Núm. 5

  2. Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

    Applied Physics Letters, Vol. 90, Núm. 9

  3. Effect of island coalescence on structural and electrical properties of InN thin films

    Journal of Crystal Growth, Vol. 300, Núm. 1, pp. 50-56

  4. Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy

    Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 289-294

  2. Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network

    Journal of Applied Physics, Vol. 100, Núm. 9

  3. Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers

    Journal of Applied Physics, Vol. 100, Núm. 9